Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
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Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are ...
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